China's R&D of New Type Memory Element: One Million Times Faster Performance

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Date: 2018-04-12

Compared to Samsung, Toshiba, and Micron, China’s current DRAM memory and NAND flash memory technologies are lagging behind for many years. However, Chinese researchers have also been chasing the latest generation of technologies. It was reported recently that China’s investment was 13 billion yuan. The PCM phase-change memory is built, and its performance is 1,000 times that of ordinary memory chips. Now it comes more powerfully. The team led by Zhang Wei and Zhou Peng of the School of Microelectronics at Fudan University has developed a new two-dimensional non-volatile memory. Memory dies, they use a semiconductor structure, the memory cell has excellent performance, is 1 million times that of traditional two-dimensional memory cell, and the performance is longer, the refresh time is 156 times that of memory, which means that it has a stronger Durability.

 

DIY players should know the respective advantages and disadvantages of memory and flash memory - the memory speed is extremely fast, but the power loss will be lost, and the cost is expensive. The delay of the flash memory is one order of magnitude higher than the memory, but the advantage is that Saving data and lowering costs at the same time, the industry has been looking for memory dies that can simultaneously have the advantages of memory and flash memory, that is, they can save data at the same time with extremely fast speeds.

 

The 3D XPoint flash memory developed by Intel has similar characteristics. Its performance is 1000 times that of flash memory and its durability is 1000 times that of flash memory. The PCM phase change memory mentioned in the previous news is similar technology. The ability to save data while power is off and the performance is similar to memory, but these new memory chips have not yet reached the mature stage of memory and flash memory.

 

Memory dies researched and developed by Chinese scholars are also in this direction. According to their papers published in the journal Nature Nanotechnology, the memory chips they developed use FETs that are not traditional wafers, because the latter As the physical size gradually shrinks, quantum interference will be encountered. So Zhang Wei and Zhou Peng's team used the semi-floating gate transistor technology. They showed a kind of van der Waals. Heterostructured near non-volatile semi-floating gate structure, this new type of memory cell has excellent performance and durability.

 

Specifically, compared with DRAM memory, its data refresh time is 156 times that of the former, that is, it can hold longer data, and at the same time, it has a write speed of nanosecond (ns) level (NAND flash memory The delay is typically in the order of milliseconds, which is a million times faster than conventional two-dimensional materials. This new type of memory is expected to reduce the gap between traditional memory and flash memory.

 

Of course, this technical progress is still very good, but do not expect technology to be mass-produced soon, and it is even less likely to enter the market within the next two or three years. However, new storage chips that have the advantages of both DRAM and NAND have this problem and are not mature. To the point of mass production, traditional memory and flash memory have a long life.


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