North American data center demand support, Server DRAM rally continues

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Date: 2018-01-11

In the first quarter of 2018, according to the DRAMeXchange, the price of Server DRAM will continue to rise; At the same time, with 2666Mhz / 2400Mhz officially replaced by 2133Mhz, the high-bandwidth server module is going to be the market.


Since the third quarter of last year, Server DRAM has been supplying the north American data center with a tighter supply of supplies to boost overall growth and more than expected. Looking ahead to the first half of this year, as DRAM manufacturers tend to be conservative in capacity planning, substantial new production capacity will be extended to the second half of this year, resulting in limited supply in the first half of the year, and the overall market supply is still tight. It is expected that the price of Server DRAM will continue to rise in the first half of this year.


According to the current Server DRAM quotation, except for long-term Agreement, the price of DDR4 32GB RDIMM has been agreed at $300, and the Server second-line OEM factory will be locked in the $310 level. Compared with the fourth quarter of last year, the average quarterly increase will be 3 to 5 percent.


The Server DRAM process is transferred to 1x nanometer, and samsung has a big lead.


To observe the production process of Server DRAM in each factory, the focus of samsung this year will accelerate the increase of 18 nanometer process, while SK hynix and micron will also make the process of 18 and 17 nanometers respectively, thus improving the proportion of their high-capacity Server modules.


If you look at the competitive landscape, the three-star three-star, which will be in the first quarter of the year, will be a big jump to 18 nanometers, and 18 nanometers will make up more than a half of your own output, a big advance of the other DRAM suppliers; However, SK hynix and micron will be able to efficiently allocate capacity as the yield improves, and by the end of this year, the 1x nanometer process will account for 30% of the total capacity of the two companies.


In addition, most server factory all have been started to verify DRAM original samples of advanced process, DRAMeXchange forecast, in the second quarter to 17 and 18 nm process in the production of a large scale, and hope that in the fourth quarter before 17/18 nano penetration process of the product reached nearly forty percent level, predictable is applied to the high capacity of server module, such as 32 gb DDR4 2666 MHZ RDIMM permeability will increase.


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