Micron make innovations of 3D NAND

Date: 2017-10-26

Micron is the leading global semiconductor giants, and committed to innovation and breakthrough of new technology, common in the DIY market Crucial solid e-sports memory, hard drives and Ballistix is Micron's two brands, provide players with the latest technology and products, pay more attention to development of e-sports market, launched a series of higher performance of e-sports memory products, meet various players of memory and the development of solid state hard drive demand.

The vigorous development of the NAND flash memory, from the SLC ChanJie storage unit at the beginning of the creation, rapid evolution to MLC, multistage storage unit design, but in the face of the growing digital data, the popularity of third-order TLC generation storage unit, let SSD solid hard disk can be extended to all kinds of computers.
And on the conditions of the area, to improve storage capacity again, can only through the "stack" to increase the density of the storage unit, and Micron more first set out to "3 d NAND flash memory" of research and development, through the floating gate cell technology, which can realize highly efficient, reliable quality and the storage of the original production technology, 32 to Micron stack storage layer, to achieve the highest single NAND chip capacity, with a single MLC flash memory body can achieve the large capacity of 256 gb, while TLC flash memory can reach 384 gb of storage capacity.
Micron 3 d NAND new technology, which can have a higher capacity, as well as the top 4 k read performance and I/O rate, and designs a new generation of sleep mode function, can cut off the 3 d NAND chip power did not work, when on standby can greatly reduce power consumption;3 d NAND with tolerance, faster to read and write speed and density of 10 times more of a traditional memory.

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