2017 in 3 d - the samsung NAND process under the influence of transformation were 3 d - NAND output accounts for 50% of the whole industry proportion in the NAND Flash, in 2018 as the SK hynix and Toshiba/western digital, micron / 3 d - NAND Intel's campaign will increase, the proportion of 3 d - 2018 NAND output proportion will break through the 70% mark.
![2018 Global 3D - NAND output accounted for more than seventy percent]( "2018 Global 3D - NAND output accounted for more than seventy percent")
From GeChang process schedule, samsung 64 layer 3 d - NAND since the third quarter of this year has entered the stage of mass production and 3 d will break through 50% of the total capacity of the fourth quarter of this year, next year will increase to a level 60-70%.SK hynix the fourth quarter of this year, 3 d - NAND capacity accounted for about 20-30% of total production level, with 48 layer 3 d - NAND is given priority to, but next year will focus on the expansion of layer 3 d - 72 NAND capacity, 3 d - NAND capacity proportion in the fourth quarter of 2018 will also come to 40-50%.
![2018 Global 3D - NAND output accounted for more than seventy percent]( "2018 Global 3D - NAND output accounted for more than seventy percent")
Toshiba/west camp in the first half of this year the mainstream process of 48 layer 3 d - NAND, expected in the fourth quarter this year 3 d - NAND proportion will account for Toshiba/western digital camp the overall capacity level of about 30%, above 50% in the fourth quarter of 2018 goals.On the capacity planning, a new semiconductor factory Fab6 started building began in March 2017, is expected to begin production in 2019 the latest 3 d - NAND products.It is important to note that due to the Toshiba and westen at present for the new factory cooperation attitude is different with previous, so variable may still exist in the future.
![2018 Global 3D - NAND output accounted for more than seventy percent]( "2018 Global 3D - NAND output accounted for more than seventy percent")
Micron/Intel camp in the first half of this year 32 output layer 3 d - NAND has stable economic scale, and in the third quarter of this year has started mass production layer 3 d - 64 NAND, the current yield reached production level, the fourth quarter of this year 3 d - NAND have a chance to come to 40-50% of the total capacity.With the Intel 2018 will be the second phase of the capacity expansion of dalian, China factory, its 3 d - NAND proportion will increase in the fourth quarter of next year to 60-70% level.