Intel 10 nm process will give priority to produce 3D NAND Flash

Date: 2017-09-25

 Before, chip giant Intel (Intel) "cutting-edge manufacturing conference" held in China, to show you the latest by production by 10 nm process technology of the wafer, and expressed by 10 nm process technology production of Cannon Lake processors will start mass production before the end of 2017.

Intel 10 nm process will give priority to produce 3D NAND Flash

 Just, now it was revealed, the first to enter the market of Intel 10 nm process technology products, will not be expected to CPU, but the market prices of the NAND Flash Flash memory.

 According to industry sources, Intel plans in their latest 64 layer 3 d NAND Flash Flash memory with the latest 10 nm process technology.Why in the 3 d NAND Flash Flash memory on the first to use the new process technology club, probably because NAND Flash Flash memory structure is relatively simple, basically is the accumulation of a large number of similar transistors.

 In contrast, the CPU processor architecture is much more complicated.And by using the new process technology to produce, complexity and the success of one of the important risk, which is Intel in 14 nm process, 10 nm process often delay the launch of a major factor.

 And in accordance with Intel, 10 nm process technology using the FinFET (fin type field effect transistor), the Hyper Scaling (very small) technology, transistor density increase 2.7 times can be the result of natural can greatly reduce the chip area, for the design of the NAND Flash Flash memory capacity can be greatly enhanced, of course.

 However, it is unclear whether Intel 10 nm process of concrete production situation of NAND Flash Flash memory, but can confirm that the future will be the first to use this batch of products in the data center market, such as cost reduction, and promote to the market consumption level.

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