Samsung is expected to release new 3 d 1 TB NAND memory next year

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Date: 2017-08-11

 Samsung NAND Flash technology to upgrade, 9 announced the development capacity of 1 TB (terabit) 3 d NAND chip, is expected to launch next year.


 Samsung r&d 1 TB of V - NAND chip (i.e., vertically stacked 3 d NAND), 512 gb capacity is the maximum storage (gigabit) twice.Samsung will combine 16 1 TB die, constitute a set of 3 d NAND group, each group of storage capacity of up to 2 TB (terabyte).Samsung claims that the technology is one of the biggest progress over the past decade the memory.


 1 TB is equivalent to 126 gb, can store 60 two hours of high-definition movie.Samsung said, a lot of artificial intelligence and the Internet of things industry development, data-intensive applications, Flash memory play a key role, can speed up the data extraction, for real-time analysis.


 Not only that, samsung also show NGSFF solid-state drives (Next Generation Small Form Factor SSD), will replace the current m. 2 SSD specifications.Samsung said NGSFF capacity of four times of the former generation, will be in the fourth quarter of this year.


 Samsung last year Z - SSD technology, now published for the first time using this technology SZ985 solid-state drives, claims that can be used in the data center and the enterprise system, deal with large data analysis such as data intensive operation.Z - SSD read the delay time of 15 microseconds, about 1/7 of the NVME solid-state hard disk.

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